A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Mid-Infrared Sensor Based on Dirac Semimetal Coupling Structure

2022-04-15

 

Author(s): Zou, YX (Zou, Yuxiao); Liu, Y (Liu, Ying); Song, GF (Song, Guofeng)

Source: SENSORS Volume: 22 Issue: 6 Article Number: 2116 DOI: 10.3390/s22062116 Published: MAR 2022

Abstract: A multilayer structure based on Dirac semimetals is investigated, where long-range surface plasmon resonance (LRSPR) of a dielectric layer/Dirac semimetal/dielectric layer are coupled with surface plasmon polaritons (SPPs) on graphene to substantially improve the Goos-Hanchen (GH) shift of Dirac semimetals in the mid-infrared band. This has important implications for the study of mid-infrared sensors. We studied the reflection coefficient and phase of this multilayer structure using a generalized transport matrix. We established that subtle changes in the refractive index of the sensing medium and the Fermi energy of the Dirac semimetal significantly affected the GH shift. Our numerical simulations show that the sensitivity of the coupling structure is more than 2.7 x 10(7) lambda / RIU, which can be used as a potential new sensor application. The novelty of this work is the design of a tunable, highly sensitive, and simple structured mid-infrared sensor that takes advantage of the excellent properties of Dirac semimetals.

Accession Number: WOS:000776377800001

PubMed ID: 35336287

eISSN: 1424-8220

Full Text: https://www.mdpi.com/1424-8220/22/6/2116



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明