Author(s): Jia, QQ (Jia, Qianqian); Chen, ZJ (Chen, Zeji); Liu, WL (Liu, Wenli); Yang, JL (Yang, Jinling); Zhu, YF (Zhu, Yinfang); Yang, FH (Yang, Fuhua)

Source: ELECTRONICS Volume: 11 Issue: 6 Article Number: 910 DOI: 10.3390/electronics11060910 Published: MAR 2022

Abstract: This paper presents a novel Pi-shaped bulk acoustic resonator (HBAR) with low bias voltages. Concave flanges were coupled with straight beams to effectively enlarge the transduction area. A silicon-on-insulator(SOI)-based fabrication process was developed to produce nanoscale spacing gaps. The tether designs were optimized to minimize the anchor loss. With a substantially improved electromechanical coupling coefficient, the high-stiffness Pi BAR can be driven into vibrations with low bias voltages down to 3 V. The resonator, vibrating at 20 MHz, implements Q values of 3600 and 4950 in air and vacuum, respectively. Strategies to further improve the resonator performance and robustness were investigated. The resonator has promising IC compatibility and could have potential for the development of high-performance timing reference devices.

Accession Number: WOS:000776811500001

eISSN: 2079-9292

Full Text: https://www.mdpi.com/2079-9292/11/6/910