Author(s): Zhen, ZX (Zhen, Zixin); Wang, Q (Wang, Quan); Qin, YB (Qin, Yanbin); Chen, CX (Chen, Changxi); Xu, JK (Xu, Jiankai); Jiang, LJ (Jiang, Lijuan); Xiao, HL (Xiao, Hongling); Wang, Q (Wang, Qian); Wang, XL (Wang, Xiaoliang); Tan, MQ (Tan, Manqing); Feng, C (Feng, Chun)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Article Number: 2200010 DOI: 10.1002/pssa.202200010 Early Access Date: MAR 2022

Abstract: A metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with Al2O3/SiN x (SiN x next to semiconductor) double insulators is proposed to obtain lower gate leakage and lower current collapse simultaneously and is comparatively studied in this article. SiN x directly next to the (Al)GaN induces fewer interface traps and provides better passivation, and Al2O3 can greatly reduce gate leakage. The Schottky gate HEMT and MIS-HEMTs with single SiN x and Al2O3 layer are also fabricated for comparison. The proposed structure shows the lowest gate leakage and the lowest current collapse as well as better output, transfer, breakdown performance. Besides, this proposed structure shows low requirements on fabrication techniques and induces fewer interface traps. Moreover, to further explore the reason behind those superior performances, the gate leakage mechanisms under reverse and forward bias conditions are studied and the interface traps are compared through capacitance-voltage (C-V) measurements in those four kinds of devices. The experimental results demonstrate that the MIS-HEMT with Al2O3/SiN x double insulators is a superior candidate for nitrides-based MIS-HEMT devices.

Accession Number: WOS:000776488900001

ISSN: 1862-6300

eISSN: 1862-6319

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/pssa.202200010