Author(s): Ma, PP (Ma, Pei-Pei); Zheng, J (Zheng, Jun); Zhang, YB (Zhang, Ya-Bao); Liu, XQ (Liu, Xiang-Quan); Liu, Z (Liu, Zhi); Zuo, YH (Zuo, Yu-Hua); Xue, CL (Xue, Chun-Lai); Cheng, BW (Cheng, Bu-Wen)

Source: CHINESE PHYSICS B Volume: 31 Issue: 4 Article Number: 047302 DOI: 10.1088/1674-1056/ac2729 Published: APR 1 2022

Abstract: Lateral beta-Ga2O3 Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type beta-Ga2O3 single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 m Omega.cm(2). Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 degrees C to 150 degrees C. These results suggest that the lateral beta-Ga2O3 SBD has a tremendous potential for future power electronic applications.

Accession Number: WOS:000777808200001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac2729