Author(s): Ben, YH (Ben, Yuhao); Liang, F (Liang, Feng); Zhao, DG (Zhao, Degang); Yang, J (Yang, Jing); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun)

Source: CRYSTALS Volume: 12 Issue: 2 Article Number: 171 DOI: 10.3390/cryst12020171 Published: FEB 2022

Abstract: In this work, a GaN-based multiple quantum well (MQW) sample has a much higher IQE although it has a stronger non-radiative recombination. Through experimental verification, the higher IQE is attributed to the suppressed carrier leakage mechanism, which is normally neglected under optical excitation. To achieve a more reasonable IQE expression in a GaN MQW structure, leakage factor m is introduced into the ABC-models. Meanwhile, by analyzing the Arrhenius fitting of the plot of IQE-temperature and leakage factor m, the key temperature and excitation power turning on the carrier leakage mechanism was roughly determined to be below 220 K and 10 mW, respectively. Such a low turn-on temperature and excitation power indicates a much easier carrier leakage mechanism in GaN-based MQW, which may be caused by the small effective electron mass of InGaN (0.11-0.22 m*) and the narrow thickness of quantum well via the model calculation of energy band structure via simulation software LASTIP. Moreover, higher IQE can be achieved by suppressing the carrier leakage mechanism via structural optimization (such as electron block layer) in GaN-based MQW.

Accession Number: WOS:000770694900001

eISSN: 2073-4352

Full Text: https://www.mdpi.com/2073-4352/12/2/171