A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Influence of Electromagnetic Field on Decoherence in Impurity Center Semiconductor Quantum Dot by Confined Spherical Gaussian Potential

2022-04-02

 

Author(s): Xin, W (Xin, Wei)

Source: INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS Volume: 61 Issue: 3 Article Number: 73 DOI: 10.1007/s10773-022-05070-5 Published: MAR 2022

Abstract: The dependence of the temperature and electromagnetic field on the decoherence of quantum superposition states in a donor-center quantum dot with a double-parametric spherical Gaussian confinement potential is investigated based on the Lee-low-pines unitary transformation. The energies and wave functions of the ground state and the first excited state of the system are derived by using the Pekar type variational method. Then a superposition state of a two-state system is constructed. Two measures are introduced to quantify the decoherence of quantum superposition states: the ground-state decay time (lifetime) and the excited transition probability. The laws and mechanisms of the effects of the materials' inherent properties, such as the dielectric constant ratio and the electron-phonon coupling constant, and environmental factors like temperature and electromagnetic field on the decoherence of superposition states are revealed through numerical calculation. This work improves the measurement method of the decoherence of superposition states, moreover, makes helpful exploration of a new scheme to suppress the decoherence of the qubit of the semiconductor quantum dot.

Accession Number: WOS:000769945400001

ISSN: 0020-7748

eISSN: 1572-9575

Full Text: https://link.springer.com/article/10.1007/s10773-022-05070-5



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明