Author(s): Al-Moathin, A (Al-Moathin, Ali); Watson, S (Watson, Scott); Tang, S (Tang, Song); Ye, SW (Ye, Shengwei); Di Gaetano, E (Di Gaetano, Eugenio); Al-Taai, QR (Al-Taai, Qusay Raghib); Eddie, I (Eddie, Iain); Huang, YG (Huang, Yongguang); Zhang, RK (Zhang, Ruikang); Li, C (Li, Chong); Hou, LP (Hou, Lianping); Kelly, A (Kelly, Anthony); Marsh, JH (Marsh, John H.)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 34 Issue: 6 Pages: 317-320 DOI: 10.1109/LPT.2022.3155730 Published: MAR 15 2022

Abstract: We present an electroabsorption modulated laser based on an identical epitaxial scheme, side-wall grating, on-chip microwave probe interface, and a new low-permittivity planarization method. The modulation speed is significantly increased by reducing the electrode capacitance by planarizing with a 5-mu m-thick HSQ layer. Furthermore, implementing the electrode with a direct ground-signal-ground probe interface provides a straightforward interconnection that obviates the need for an external circuit and bonding wires. The device operates at 1565 nm wavelength with stable single-mode lasing, no mode-hopping, and a side mode suppression ratio above 35 dB. An extinction ratio of 19.5 dB was recorded at the maximum modulator bias of - 4 V. The electrical to optical power response of the modulated signal at -3-dBo demonstrated a 19 GHz bandwidth at an extinction ratio of 7 dB, which supports error-free data transmission up to 27 Gbit/s.

Accession Number: WOS:000767851100001

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

Li, Chong 0000-0001-5654-0039

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9724228