Author(s): Yang, Q (Yang, Qian); Zhao, DG (Zhao, Degang); Yang, J (Yang, Jing); Liu, ZS (Liu, Zongshun); Duan, LH (Duan, Lihong); Jiang, DS (Jiang, Desheng)

Source: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Article Number: 2100618 DOI: 10.1002/pssa.202100618 Early Access Date: MAR 2022

Abstract: The failure analysis of a GaN p-i-n diode is carried out by current-voltage (I-V) tests, emission microscope (EMMI), focused ion beam (FIB), and scanning electron microscope (SEM). A nanotube is found at the location of the luminous spot in the EMMI test. Intentional breakdown experiments show that the breakdown voltages of about 1/3 diodes with the size of 1x1 mm2 are lower than 50 V. These proportions are 1/2 and 5/6 for the diodes with the size of 1x2 mm2 and 2x2 mm2, respectively. At the breakdown injuries of some diodes, the nanotubes are also discovered, which indicates that nanotubes should be one of the important reasons for the reduction of the breakdown threshold voltage.

Accession Number: WOS:000770782700001

ISSN: 1862-6300

eISSN: 1862-6319

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/pssa.202100618