Author(s): Yang, JK (Yang, Jiankun); Gao, YQ (Gao, Yaqi); Zheng, W (Zheng, Wei); He, R (He, Rui); Huo, ZQ (Huo, Ziqiang); Ji, XL (Ji, Xiaoli); Ran, JX (Ran, Junxue); Duan, RF (Duan, Ruifei); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Wei, TB (Wei, Tongbo)

Source: CRYSTAL GROWTH & DESIGN Volume: 22 Issue: 3 Pages: 1731-1737 DOI: 10.1021/acs.cgd.1c01320 Published: MAR 2 2022

Abstract: Semipolar (11-22) AlN films grown on m-plane sapphire are investigated by flow-rate modulation epitaxy (FME). The full width of half maximums (FWHMs) of thin AlN film for X-ray rocking curves (XRCs) are reduced from 1398 arcsec for traditional growth to 865 arcsec for III-FME. The reduced defect density is attributed to prolonged Al mobility, which results in the transition of growth mode from quasi three-dimensional to two-dimensional step flow. On-axis FWHM[11-23] and off-axis FWHM[0002] of XRCs for 6 mu m-thick III-FME AIN film are reduced to 346 arcsec and 641 arcsec, respectively. Metal-semiconductor-metal AlN-based photodetectors prepared on the asgrown (11-22) AlN demonstrate the remarkable operating characteristics with a high photo-to-dark-current ratio of 740-2.27 x 10(4) and responsivity of 6-20 mA/W under 185 nm illumination, which implies promising application in vacuum-ultraviolet photodetection field.

Accession Number: WOS:000768308400001

ISSN: 1528-7483

eISSN: 1528-7505

Full Text: https://pubs.acs.org/doi/10.1021/acs.cgd.1c01320