A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Vapor phase epitaxy of PbS single-crystal films on water-soluble substrates and application to photodetectors

2022-03-25

 

Author(s): Wang, YF (Wang, Yifan); Xia, J (Xia, Jing); Li, XZ (Li, Xuanze); Ru, F (Ru, Fan); Chen, X (Chen, Xue); Hua, Z (Hua, Ze); Shao, RW (Shao, Ruiwen); Wang, XC (Wang, Xuecong); Zhang, WJ (Zhang, Wenjun); Lee, CS (Lee, Chun-Sing); Meng, XM (Meng, Xiangmin)

Source: NANO RESEARCH DOI: 10.1007/s12274-022-4101-4 Early Access Date: MAR 2022

Abstract: Lead sulfide (PbS), a typical functional semiconductor material, has attracted serious attention due to its great potential in optoelectronics applications. However, controllable growth of PbS single-crystal film still remains a great challenge. Here, we report heteroepitaxial growth of large-scale highly crystalline PbS films on alkali salt (NaCl and KCl) substrates via chemical vapor deposition (CVD). Structural characterizations demonstrate that the as-grown PbS films exhibit an atomically sharp interface with the underlying substrates. The epitaxial relationships between the epilayers and substrates were determined to be PbS (100)//NaCl (100) or KCl (100), PbS [010]//NaCl [010] or KCl [010]. Owing to the high solubility of alkali salt, the epitaxial PbS films can be rapidly released from the underlying substrates and transferred to other substrates of interest while maintaining good integrity and crystallinity, the process of which is particularly attractive in the fields of electronics and optoelectronics. Furthermore, photodetectors based on the transferred PbS films were fabricated, exhibiting a high photoresponsivity of 7.5 A/W, a detectivity of 1.44 x 10(12) Jones, and a rapid response time of approximately 0.25 s. This work sheds light on the batch production, green transfer, and optoelectronic application of PbS films.

Accession Number: WOS:000765682800001

ISSN: 1998-0124

eISSN: 1998-0000

Full Text: https://link.springer.com/article/10.1007/s12274-022-4101-4



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明