Author(s): Wang, S (Wang, Shuai); Ye, H (Ye, Han); Geng, LY (Geng, Liyan); Lu, ZQ (Lu, Ziqing); Xiao, F (Xiao, Feng); Xiao, F (Xiao, Fan); Han, Q (Han, Qin)

Source: JOURNAL OF ELECTRONIC MATERIALS DOI: 10.1007/s11664-022-09531-9 Early Access Date: MAR 2022

Abstract: The design, fabrication, and characteristic analysis of a 64 x 64 InGaAs/InP single-photon avalanche diode (SPAD) array, which was developed for a three-dimensional (3D) imaging laser radar system at the wavelength of 1550 nm, are described. The source and physical mechanism of the dark current, photodetection efficiency, and dark count rate of the SPAD array are also analyzed and discussed. The SPAD array exhibits single-photon sensitivity when working in the Geiger mode. The diameter and pixel pitch of the diode in the array are 25 mu m and 150 mu m, respectively. The mean breakdown voltage of the diodes is 58.5 V, with a deviation of +/- 1.5 V. The dark current at the breakdown voltage is in a range below 1 nA, The 25-mu m-diameter SPAD shows a high single-photon detection efficiency of 25.72% at 1550 nm, and a low dark count rate of 9.09 kHz at 223 K.

Accession Number: WOS:000766996200003

ISSN: 0361-5235

eISSN: 1543-186X

Full Text: https://link.springer.com/article/10.1007/s11664-022-09531-9