Author(s): Wang, Y (Wang, Ying); Qiu, C (Qiu, Chen); Shen, CH (Shen, Chenhai); Li, L (Li, Lin); Yang, KK (Yang, Kaike); Wei, ZM (Wei, Zhongming); Deng, HX (Deng, Hui-Xiong); Xia, CX (Xia, Congxin)

Source: JOURNAL OF PHYSICS-CONDENSED MATTER Volume: 34 Issue: 19 Article Number: 195003 DOI: 10.1088/1361-648X/ac5707 Published: MAY 11 2022

Abstract: The band offsets between semiconductors are significantly associated with the optoelectronic characteristics and devices design. Here, we investigate the band offset trends of few-layer and bulk IV-VI semiconductors MX and MX2 (M = Ge, Sn; X = S, Se, Te). For common-cation (anion) systems, as the atomic number increases, the valence band offset of MX decreases, while that of MX2 has no distinct change, and the physical origin can be interpreted using band coupling mechanism and atomic potential trend. The band edges of GeX2 system straddle redox potentials of water, making them competitive candidates for photocatalyst. Moreover, layer number modulation can induce the band offset of GeSe/SnS and GeSe2/GeS2 heterojunction undergoing a transition from type I to type II, which makes them suitable for optoelectronic applications.

Accession Number: WOS:000765969700001

PubMed ID: 35189609

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

Qiu, Chen 0000-0003-4389-6671

wei, zhong ming 0000-0002-6237-0993

ISSN: 0953-8984

eISSN: 1361-648X

Full Text: https://iopscience.iop.org/article/10.1088/1361-648X/ac5707