Author(s): Liang, Y (Liang, Yan); Perumalveeramalai, C (Perumalveeramalai, Chandrasekar); Lin, GC (Lin, Guochen); Su, XB (Su, Xiangbin); Zhang, XM (Zhang, Xiaoming); Feng, S (Feng, Shuai); Xu, YQ (Xu, Yingqiang); Li, CB (Li, Chuanbo)

Source: NANOTECHNOLOGY Volume: 33 Issue: 22 Article Number: 222003 DOI: 10.1088/1361-6528/ac5442 Published: MAY 28 2022

Abstract: The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated photonics system. Specifically, III-V compound APD has become one of the main applications of optical fiber communication reception due to adaptable bandgap and low noise characteristics. The advancement of structural design and material choice has emerged as a means to improve the performance of APDs. Therefore, it is inevitable to review the evolution and recent developments on III-V compound APDs to understand the current progress in this field. To begin with, the basic working principle of APDs are presented. Next, the structure development of APDs is briefly reviewed, and the subsequent progression of III-V compound APDs (InGaAs APDs, AlxIn1-x AsySb1-y APDs) is introduced. Finally, we also discuss the key issues and prospects of AlxIn1-x AsySb1-y digital alloy avalanche APDs that need to be addressed for the future development of >= 2 mu m optical communication field.

Accession Number: WOS:000766357900001

PubMed ID: 35147516

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

Zhang, Xiaoming 0000-0001-8707-9097

perumalveeramalai, chandrasekar A-7527-2019 0000-0003-1166-6695

ISSN: 0957-4484

eISSN: 1361-6528

Full Text: https://iopscience.iop.org/article/10.1088/1361-6528/ac5442