Author(s): Guo, ZN (Guo, Zhinan); Cao, R (Cao, Rui); Wang, HD (Wang, Huide); Zhang, X (Zhang, Xi); Meng, FX (Meng, Fanxu); Chen, X (Chen, Xue); Gao, SY (Gao, Siyan); Sang, DK (Sang, David K.); Nguyen, TH (Thi Huong Nguyen); Duong, AT (Anh Tuan Duong); Zhao, JL (Zhao, Jinlai); Zeng, YJ (Zeng, Yu-Jia); Cho, S (Cho, Sunglae); Zhao, B (Zhao, Bing); Tan, PH (Tan, Ping-Heng); Zhang, H (Zhang, Han); Fan, DY (Fan, Dianyuan)

Source: NATIONAL SCIENCE REVIEW Article Number: nwab098 DOI: 10.1093/nsr/nwab098 Early Access Date: MAY 2021

Abstract: Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (gamma-, epsilon- and beta-phase) of InSe, only the crystal lattice of InSe in beta-phase (beta-InSe) belongs to a non-symmetry point group of D-6h(4), which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of beta-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered beta-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of beta-InSe have been experimentally and theoretically proven, showing that the beta-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify beta-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

Accession Number: WOS:000764412900001

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

Tan, Ping-Heng D-1137-2009 0000-0001-6575-1516

ISSN: 2095-5138

eISSN: 2053-714X

Full Text: https://academic.oup.com/nsr/advance-article/doi/10.1093/nsr/nwab098/6289927