Author(s): Safarov, VI (Safarov, Viatcheslav I.); Rozhansky, IV (V. Rozhansky, Igor); Zhou, ZQ (Zhou, Ziqi); Xu, B (Xu, Bo); Wei, ZM (Wei, Zhongming); Wang, ZG (Wang, Zhan-Guo); Lu, Y (Lu, Yuan); Jaffres, H (Jaffres, Henri); Drouhin, HJ (Drouhin, Henri-Jean)

Source: PHYSICAL REVIEW LETTERS Volume: 128 Issue: 5 Article Number: 057701 DOI: 10.1103/PhysRevLett.128.057701 Published: FEB 3 2022

Abstract: We report on carrier dynamics in a spin photodiode based on a ferromagnetic-metal-GaAs tunnel junction. We show that the helicity-dependent current is determined not only by the electron spin polarization and spin asymmetry of the tunneling but in great part by a dynamical factor resulting from the competition between tunneling and recombination in the semiconductor, as well as by a specific quantity: the charge polarization of the photocurrent. The two latter factors can be efficiently controlled through an electrical bias. Under longitudinal magnetic field, we observe a strong increase of the signal arising from inverted Hanle effect, which is a fingerprint of its spin origin. Our approach represents a radical shift in the physical description of this family of emerging spin devices.

Accession Number: WOS:000759200500004

PubMed ID: 35179915

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

Lu, Yuan M-9239-2014 0000-0003-3337-8205

wei, zhong ming 0000-0002-6237-0993

ISSN: 0031-9007

eISSN: 1079-7114

Full Text: https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.128.057701