Author(s): Wang, GY (Wang, Guangyuan); Meng, XQ (Meng, Xianquan)

Source: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI: 10.1007/s10854-022-07733-9 Early Access Date: FEB 2022

Abstract: In this paper, we design and demonstrate a high-performance broadband photodetector (PD) with p-SnS/n-ZnS heterojunction nanowires as active material and novel nanoparticle-anchored silver nanowires (NP-anchored Ag NWs) as efficient plasmonic electrodes. The crystal structure, epitaxy process, surface composition, and intrinsic defect state of the as-synthesized p-SnS/n-ZnS heterojunction nanowires are investigated. The finite-difference time-domain simulation verifies a giant near-field intensity enhancement (similar to 1000 times) at the Ag NP-NW junction. Notably, the fabricated NP-anchored Ag NWs PD exhibits excellent photoresponse (responsivity = 80 A/W, detectivity = 7.9 x 10(11) Jones, and EQE = 2.7 x 10(4)% @365 nm, 5 V bias) and fast response speed (t(r) = 0.04 s and t(d) = 0.07 s), outperforming most recently reported ZnS heterojunction-based PDs. The strategy presented in this work may be instructive to design high-performance optoelectronic devices for making better use of plasmons.

Accession Number: WOS:000750714400011

ISSN: 0957-4522

eISSN: 1573-482X

Full Text: https://link.springer.com/article/10.1007/s10854-022-07733-9