Author(s): Zhao, LX (Zhao, Lixia); Liu, C (Liu, Chang); Wang, KY (Wang, Kaiyou)

Source: SMALL Article Number: 2106757 DOI: 10.1002/smll.202106757 Early Access Date: FEB 2022

Abstract: Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.

Accession Number: WOS:000761246900001

PubMed ID: 35218296

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

zhao, lixia 0000-0002-0466-247X

ISSN: 1613-6810

eISSN: 1613-6829

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/smll.202106757