Author(s): Bao, YD (Bao, Yidi); Liu, W (Liu, Wen); Zhao, YQ (Zhao, Yongqiang); Wei, L (Wei, Lei); Chen, XL (Chen, Xiaoling); Yang, FH (Yang, Fuhua); Wang, XD (Wang, Xiaodong)

Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 40 Issue: 2 Article Number: 022205 DOI: 10.1116/6.0001570 Published: MAR 2022

Abstract: Textured GaAs surfaces with near-zero reflectance are promising for the antireflective application of photovoltaic and optoelectronic devices. Such surfaces can be described as "black GaAs " attributing to their superior light-trapping capability. In this paper, black GaAs with grasslike nanowire bunches was fabricated in a maskless inductively coupled plasma (ICP) etching manner. Cl-2/BCl3/O-2/Ar chemistry was selected as the feed gas in the ICP system. Undoped black GaAs with solar-weighted reflectance (SWR) of 1.01% and doped black GaAs with SWR of 2.56% were obtained. In the study, the surface morphology and antireflection behavior of the textured GaAs were found to vary at different etching time, power conditions, and O-2 contents. Combined with the surface element analyses, the etching mechanism of the maskless process was proposed. It is considered as a competing mechanism for the removal of the GaAs material by Cl-based gases and the passivation of the surface by O radicals. This maskless texturing method has the advantages of simplicity, scalability, and efficiency. The black GaAs of such patterns has prospects in photodetectors, solar cells, and flexible devices.

Accession Number: WOS:000760785800001

ISSN: 2166-2746

eISSN: 2166-2754

Full Text: https://avs.scitation.org/doi/10.1116/6.0001570