Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on-Free Substrates
Author(s): Chen, JR (Chen, Jingren); Wang, GK (Wang, Gaokai); Meng, JH (Meng, Junhua); Cheng, Y (Cheng, Yong); Yin, ZG (Yin, Zhigang); Tian, Y (Tian, Yan); Huang, JD (Huang, Jidong); Zhang, SY (Zhang, Siyu); Wu, JL (Wu, Jinliang); Zhang, XW (Zhang, Xingwang)
Source: ACS APPLIED MATERIALS & INTERFACES DOI: 10.1021/acsami.1c22626 Early Access Date: JAN 2022
Abstract: Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. However, it is still a great challenge to directly grow high-quality hBN on dielectric substrates, and an extremely high substrate temperature or annealing is usually required. In this work, high quality few-layer h-BN is directly grown on sapphire substrates via ion beam sputtering deposition at a relatively low temperature of 700 degrees C by introducing NH3 into the growth chamber. Such low growth temperature is attributed to the presence of abundant active N species, originating from the decomposition of NH3 under ion beam irradiation. To further tailor the properties of h-BN, carbon was introduced into the h-BN layer by simultaneously introducing CH4 and NH3 during the growth process, indicating the wide applicability of this approach. Moreover, a deep ultraviolet (DUV) photodetector is also fabricated from a C-doped h-BN layer and exhibits superior performance compared with an intrinsic h-BN device.
Accession Number: WOS:000757838600001
PubMed ID: 35080841
ISSN: 1944-8244
eISSN: 1944-8252
