Author(s): Zhou, YC (Zhou, Yuchen); Han, LX (Han, Lixiang); Song, QQ (Song, Qiqi); Gao, W (Gao, Wei); Yang, MM (Yang, Mengmeng); Zheng, ZQ (Zheng, Zhaoqiang); Huang, L (Huang, Le); Yao, JD (Yao, Jiandong); Li, JB (Li, Jingbo)

Source: SCIENCE CHINA-MATERIALS Volume: 65 Issue: 3 Pages: 732-740 DOI: 10.1007/s40843-021-1847-7 Published: MAR 2022

Abstract: The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection. In this field, the two-dimensional (2D) tungsten disulfide (WS2) exhibits intriguing optical and electronic properties, making it an attractive photosensitive material for optoelectronic applications. However, the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS2 impedes its application in high-performance photodetectors. Herein, we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS2. In this device, 1D Te induces in-plane strain in 2D WS2, which regulates the electronic structures of local WS2 and gives rise to type-II band alignment in the horizontal direction. Moreover, the vertical heterojunction built of 2D WS2 and 1D Te introduces a high photoconductive gain. Benefiting from these two effects, the transfer of photogenerated carriers is optimized, and the proposed photodetector exhibits high sensitivity (photoresponsivity of similar to 27.7 A W-1, detectivity of 9.5 x 10(12) Jones, and short rise/decay time of 19.3/17.6 ms). In addition, anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved. This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties, opening up a new avenue towards constructing multifunctional optoelectronic devices.

Accession Number: WOS:000754243200016

ISSN: 2095-8226

eISSN: 2199-4501

Full Text: https://link.springer.com/article/10.1007/s40843-021-1847-7