Author(s): She, LF (She, Lifang); Jiang, JK (Jiang, Junkai); Chen, WQ (Chen, Weiqiang); Cui, SN (Cui, Suning); Jiang, DW (Jiang, Dongwei); Wang, GW (Wang, Guowei); Xu, YQ (Xu, Yingqiang); Hao, HY (Hao, Hongyue); Wu, DH (Wu, Donghai); Ding, Y (Ding, Ying); Niu, ZCA (Niu, Zhichuan)

Source: INFRARED PHYSICS & TECHNOLOGY Volume: 121 Article Number: 104015 DOI: 10.1016/j.infrared.2021.104015 Published: MAR 2022

Abstract: Mid-wavelength infrared InAs/InAsSb type-II superlattice p(+)-B-n photodetectors are demonstrated. An AlAsSb/InAsSb superlattice barrier structure is introduced in order to reduce the bias dependency of optical efficiency. The photodetector exhibits a cut-off wavelength of similar to 5.0 mu m at 150 K. At 150 K and -100 mV applied bias, the photodetector exhibits a dark current density of 1.2 x 10(-4) A/cm(2), a quantum efficiency of 29% at peak responsivity (similar to 4.1 mu m), and a specific detectivity of 1.2 x 10(11) cm.Hz(1/2) /W.

Accession Number: WOS:000752498700001

ISSN: 1350-4495

eISSN: 1879-0275

Full Text: https://www.sciencedirect.com/science/article/pii/S135044952100387X?via%3Dihub