Author(s): Liu, T (Liu, T.); Liu, X (Liu, X.); Chen, D (Chen, D.); Liu, Q (Liu, Q.); Zuo, Y (Zuo, Y.); Guo, X (Guo, X.); Zheng, J (Zheng, J.); Liu, Z (Liu, Z.); Xue, C (Xue, C.); Cheng, B (Cheng, B.)

Source: APPLIED PHYSICS LETTERS Volume: 119 Issue: 15 Article Number: 153501 DOI: 10.1063/5.0067710 Published: OCT 11 2021

Abstract: Since the absorption zone of ultraviolet (UV) photons with high energy is limited to a few tens of nm on the surface, the high defect density caused by the processes, such as ion implantation, leads to a weak response of the silicon avalanche photodiode (APD) in the ultraviolet band. In this work, the integration of the inorganic perovskite quantum dots (QDs) film by drop-casting as the down-shifting layer is reported for enhancing the UV response of Si APD. The light generated current increases 100% under the 365nm light emitting diode. The response of the Si APD is improved in the entire ultraviolet band. In particular, the responsivity of APD is increased by 78% at 340nm with an exceedingly EQE of 92%. In summary, the perovskite QDs film as a down-shifting layer provides an effective and low-cost method to improve the UV response of Si APD. Published under an exclusive license by AIP Publishing.

Accession Number: WOS:000754619000012

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: https://aip.scitation.org/doi/10.1063/5.0067710