Quantum Dot Interface-Mediated CsPbIBr2 Film Growth and Passivation for Efficient Carbon-Based Solar Cells
Author(s): Qi, XN (Qi, Xingnan); Wang, JT (Wang, Jiantao); Tan, FR (Tan, Furui); Dong, C (Dong, Chen); Liu, K (Liu, Kong); Li, XB (Li, Xiaobao); Zhang, LS (Zhang, Lisheng); Wu, HK (Wu, Hongkai); Wang, HL (Wang, Hsing-Lin); Qu, SC (Qu, Shengchun); Wang, ZG (Wang, Zhanguo); Wang, ZJ (Wang, Zhijie)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 13 Issue: 46 Pages: 55338-55346 DOI: 10.1021/acsami.1c16290 Published: NOV 24 2021
Abstract: CsPbIxBry-based all-inorganic perovskite materials are a potential candidate for stable semitransparent and tandem structured photovoltaic devices. However, poor film (morphological and crystalline) quality and interfacial recombination lead consequently to a decline in the photoelectric conversion performance of the applied solar cells. In this work, we incorporated PbS quantum dots (QDs) at the interface of electron transporting layer (ETL) SnO2 and perovskite to modulate the crystallization of CsPbIBr2 and the interfacial charge dynamics in carbon-based solar cells. The as-casted PbS QDs behave as seeds for lattice-matching the epitaxial growth of pinhole-free CsPbIBr2 films. The modified films with reduced defect density exhibit facilitated carrier transfer and suppressed charge recombination at the ETL/perovskite interface, contributing to an enhanced device efficiency from 7.00 to 9.09% and increased reproducibility and ambient stability. This strategic method of QD-assisted lattice-matched epitaxial growth is promising to prepare high-quality perovskite films for efficient perovskite solar cells.
Accession Number: WOS:000751884800070
PubMed ID: 34762401
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
zhang, lisheng 0000-0002-3093-1856
ISSN: 1944-8244
eISSN: 1944-8252
