Tunable magnetism in ferroelectric alpha-In2Se3 by hole-doping
Author(s): Liu, C (Liu, Chang); Wang, B (Wang, Bing); Jia, GW (Jia, Guanwei); Liu, PY (Liu, Pengyu); Yin, HB (Yin, Huabing); Guan, S (Guan, Shan); Cheng, ZX (Cheng, Zhenxiang)
Source: APPLIED PHYSICS LETTERS Volume: 118 Issue: 7 Article Number: 072902 DOI: 10.1063/5.0039842 Published: FEB 15 2021
Abstract: Two-dimensional (2D) multiferroics attract intensive investigations because of underlying science and their potential applications. Although many 2D systems have been observed/predicted to be ferroelectric or ferromagnetic, 2D materials with both ferroic properties are still scarce. By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric alpha-In2Se3 due to its unique flatband structure, and the Curie temperature (T-C) can be much higher than room temperature. Moreover, the doping concentration, strain, and number of layers can effectively modulate the magnetic moment and T-C of the material. Interestingly, strong magnetoelectric coupling is found at the surface of hole doped multilayer alpha-In2Se3, which allows nonvolatile electric control of magnetization. Our work provides a feasible approach for designing/searching 2D multiferroics with great potential in future device applications, such as memory devices and sensors.
Accession Number: WOS:000630425200001
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Liu, Chang 0000-0002-5931-5475
ISSN: 0003-6951
eISSN: 1077-3118
