Author(s): Wang, N (Wang, Nan); Xue, CL (Xue, Chunlai); Wan, FS (Wan, Fengshuo); Zhao, Y (Zhao, Yue); Xu, GY (Xu, Guoyin); Liu, Z (Liu, Zhi); Zheng, J (Zheng, Jun); Zuo, YH (Zuo, Yuhua); Cheng, BW (Cheng, Buwen); Wang, QM (Wang, Qiming)

Source: IEEE PHOTONICS JOURNAL Volume: 13 Issue: 2 DOI: 10.1109/JPHOT.2021.3065223 Published: APR 2021

Abstract: We report the design and fabrication of a high-speed GeSn normal-incidence p-i-n photodetector. To realize high-speed detection in all telecommunication bands, we optimize the Sn content in the absorption layer, the absorption-layer thickness, and the device size. The responsivity of the 18-mu m-diameter device at 1550 nm reaches 0.32 A/W with an extended cutoff wavelength of 1700 nm and a 3-dB bandwidth as high as 28 GHz under -3 V bias, clear open eye diagrams are also obtained under zero bias at 1630 nm. All the results indicate that the device has a significant potential for applications in Si-based optical telecommunication in all telecommunication bands.

Accession Number: WOS:000749916900001

ISSN: 1943-0655

eISSN: 1943-0647

Full Text: https://ieeexplore.ieee.org/document/9376607