Author(s): Yu, HY (Yu, Hongyan); Wang, MQ (Wang, Mengqi); Zhou, DB (Zhou, Daibing); Zhou, XL (Zhou, Xuliang); Wang, PF (Wang, Pengfei); Liang, S (Liang, Song); Zhang, YJ (Zhang, Yejin); Pan, JQ (Pan, Jiaoqing); Wang, W (Wang, Wei)

Source: OPTICS COMMUNICATIONS Volume: 497 Article Number: 127201 DOI: 10.1016/j.optcom.2021.127201 Published: OCT 15 2021

Abstract: We demonstrate a widely tunable InGaAs quantum-wells (QWs) distributed Bragg reflector (DBR) laser, in which the DBR section was realized by using butt-jointed InGaAsP (lambda = 1.46 mu m) material. In the device process, we explored an optimal chemical etchant applied in the butt-jointed active-passive integration technology. A wide tuning range of 10.7 nm with 19 consecutive channels is obtained with a single tuning current at room temperature (RT). With the help of the heat sink temperature, the tuning range is expanded to 16 nm. A side mode suppression ratio (SMSR) of higher than 34 dB is obtained for all channels at 5 degrees C to 45 degrees C. A six-wavelength laser array that can cover a wavelength tuning range of 41.6 nm at 20 degrees C with a side mode suppression ratio higher than 37 dB in all channels is demonstrated by varying the grating periods. It is a promising light source for methane or multispecies gas detection.

Accession Number: WOS:000747468500016

ISSN: 0030-4018

eISSN: 1873-0310

Full Text: https://www.sciencedirect.com/science/article/pii/S0030401821004508?via%3Dihub