Author(s): Ji, WJ (Ji, Wei-Jie); Zheng, SY (Zheng, Shu-Yu); Lu, L (Lu, Li); Chang, K (Chang, Kai); Zhang, C (Zhang, Chi)

Source: PHYSICAL REVIEW B Volume: 104 Issue: 15 Article Number: 155308 DOI: 10.1103/PhysRevB.104.155308 Published: OCT 26 2021

Abstract: We perform a quantum transport study of Hall viscous liquid in multiterminal narrow Hallbar devices of a high-mobility two-dimensional electron system (2DES) in GaAs/AlGaAs heterostructure. In the nonlocal transport measurements of vicinity geometry under magnetic fields (B), we observe that the absolute negative magnetoresistance (R-xx) value (R-min < 0) and the corresponding magnetic field (B-min) are both inversely proportional to the adjacent Hallbar arm distance (L). The occurrence of negative resistance is dependent on the characteristic lengths of the devices and the electron flow direction under B-fields. The minimal resistance R-min occurs when the cyclotron radius R-c approximates L. Multiples of high-order (nth-order) Rmmn's persist from low to high magnetic fields in a large sample size of L = 5 mu m. Our experimental study reveals the transport behaviors in the vicinity regime, where the negative resistances depict viscous electronic flows in the high-mobility 2DES. In addition, the negative and high-order minimal resistances expand to a magnetic field of several kGs.

Accession Number: WOS:000747824500002

ISSN: 2469-9950

eISSN: 2469-9969

Full Text: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.155308