Author(s): Li, T (Li, Tao); Song, WQ (Song, Wenqing); Zhang, L (Zhang, Lei); Yan, JC (Yan, Jianchang); Zhu, WH (Zhu, Wenhui); Wang, LC (Wang, Liancheng)

Source: OPTICS LETTERS Volume: 47 Issue: 3 Pages: 637-640 DOI: 10.1364/OL.443638 Published: FEB 1 2022

Abstract: Self-powered ultraviolet detectors may find application in aviation and military fields. Here we demonstrate a self-powered asymmetric metal-semiconductor-metal (MSM) deep ultraviolet (DUV) detector with an Ni/Al electrode contact to AIN, and a photoelectric response current increase from dark current (I-d) 2.6 x 10(-12) A to 1.0 x 10(-10) A after UV illumination (I-p) at 0 V bias. To further improve device performance, trenches are etched in AIN, and the Ni/Al electrodes are deposited in trenches to form a three-dimensional MSM (3D-MSM) structure. The improved performance is attributed to the stronger electric field from the asymmetric electrode and a shorter carrier migration path from the 3D-MSM device configuration. Our work will promote the development and application of DUV self-powered devices. (C) 2022 Optical Society of America

Accession Number: WOS:000749682500049

PubMed ID: 35103692

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://opg.optica.org/ol/fulltext.cfm?uri=ol-47-3-637&id=468751