Author(s): Wen, LJ (Wen, Lianjun); Pan, D (Pan, Dong); Liu, L (Liu, Lei); Tong, SC (Tong, Shucheng); Zhuo, R (Zhuo, Ran); Zhao, JH (Zhao, Jianhua)

Source: JOURNAL OF PHYSICAL CHEMISTRY LETTERS Volume: 13 Issue: 2 Pages: 598-605 DOI: 10.1021/acs.jpclett.1c04001 Early Access Date: JAN 2022 Published: JAN 20 2022

Abstract: Narrow bandgap InAs1-xSbx nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors, and quantum computation. Realizing such applications requires a fine control of the composition and crystal structure of nanowires. However, the fabrication of large-composition-range pure-phase homogeneous InAs1-xSbx nanowires remains a huge challenge. Here, we first report the growth of large-composition-range stemless InAs1-xSbx nanowires (0 <= x <= 0.63) on Si (111) substrates by molecular beam epitaxy. We find that pure-phase InAs1-xSbx nanowires can be successfully obtained by controlling the antimony content x, nanowire diameter, and nanowire growth direction. Detailed energy dispersive spectrum data show that the antimony is uniformly distributed along the axial and radial directions of InAs1-xSbx nanowires and no spontaneous core-shell nanostructures form in the nanowires. On the basis of field-effect measurements, we confirm that InAs1-xSbx nanowires exhibit good conductivity and their mobilities can reach 4200 cm(2) V-1 s(-1) at 7 K. Our work lays the foundation for the development of InAs1-xSbx nanowire optoelectronic, electronic, and quantum devices.

Accession Number: WOS:000743740400001

PubMed ID: 35019661

Author Identifiers:

Author Web of Science ResearcherID ORCID Number

Zhao, Jianhua 0000-0003-2269-3963

Pan, Dong 0000-0003-2067-6983

ISSN: 1948-7185

Full Text: https://pubs.acs.org/doi/10.1021/acs.jpclett.1c04001