Author(s): Zhang, Y (Zhang, Yang); Liu, Y (Liu, Yu); Xue, XL (Xue, Xiao-Lan); Zeng, XL (Zeng, Xiao-Lin); Wu, J (Wu, Jing); Shi, LW (Shi, Li-Wei); Chen, YH (Chen, Yong-Hai)

Source: SENSORS Volume: 22 Issue: 1 Article Number: 399 DOI: 10.3390/s22010399 Published: JAN 2022

Abstract: Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

Accession Number: WOS:000741445100001

PubMed ID: 35009939

eISSN: 1424-8220

Full Text: https://www.mdpi.com/1424-8220/22/1/399