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InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier

2022-01-20

 

Author(s): Xiao, F (Xiao, Feng); Han, Q (Han, Qin); Ye, H (Ye, Han); Wang, S (Wang, Shuai); Xiao, F (Xiao, Fan)

Source: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 61 Issue: 1 Article Number: 012005 DOI: 10.35848/1347-4065/ac38fb Published: JAN 1 2022

Abstract: We demonstrate an InP-based high-speed monolithic PIN photodetector (PD) integrated with a multi-quantum well semiconductor optical amplifier (SOA). A butt-joint scheme is adopted to connect the SOA and evanescent wave PD. The chip allows for a separate design for the SOA and the PD, and needs only two metal-organic chemical vapor deposition growth steps, which promises high yield and reduced manufacturing cost. The fabricated 5 x 20 mu m(2) PD shows a low dark current of 300 pA at -3V. The optical gain bandwidth of the SOA is 50 nm, covering the whole c-band. The gain ripple of the SOA is 0.5 dB, indicating that the internal parasitic reflectivity is negligible. For an integrated chip with a 500 mu m SOA, the on-chip gain and total chip responsivity at 1545 nm can reach 12.8 dB and 7.8 A W-1, respectively. The insertion loss of the butt-joint interface is estimated to be 1.05 dB/interface. The small signal 3 dB bandwidth at -5V of the integrated chip reaches 20 GHz, showing no deterioration compared to a discrete PD. (C) 2022 The Japan Society of Applied Physics

Accession Number: WOS:000741718300001

ISSN: 0021-4922

eISSN: 1347-4065

Full Text: https://iopscience.iop.org/article/10.35848/1347-4065/ac38fb



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