Author(s): Mei, T (Mei, Tong); Li, S (Li, Shan); Zhang, SH (Zhang, Shaohui); Liu, YY (Liu, Yuanyuan); Li, PG (Li, Peigang)

Source: PHYSICA SCRIPTA Volume: 97 Issue: 1 Article Number: 015808 DOI: 10.1088/1402-4896/ac476e Published: JAN 1 2022

Abstract: In this paper, a epsilon-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep ultraviolet (UV) photodetector is described for 254 nm wavelength sensing application. The constructed epsilon-Ga2O3/ZnO heterojunction photodetector can operate in dual modes which are power supply mode and self-powered mode. Under reverse 5 V bias with 254 nm light intensity of 500 mu W cm(-2), the photoresponsivity, specific detectivity and external quantum efficiency are 59.7 mA W-1, 7.83 x 10(12) Jones and 29.2%. At zero bias, the advanced epsilon-Ga2O3/ZnO photodetector performs decent self-powered photoelectrical properties with photo-to-dark current ratio of 1.28 x 10(5), on/off switching ratio of 3.22 x 10(4), rise/decay times of 523.1/31.7 ms, responsivity of 4.12 mA W-1 and detectivity of 2.24 x 10(12) Jones. The prominent photodetection performance lays a solid foundation for epsilon-Ga2O3/ZnO heterojunction in deep UV sensor application.

Accession Number: WOS:000741125700001

ISSN: 0031-8949

eISSN: 1402-4896

Full Text: https://iopscience.iop.org/article/10.1088/1402-4896/ac476e