Author(s): Yang, WL (Yang, Wanli); Huang, TT (Huang, Tiantian); He, JB (He, Junbo); Zhang, SJ (Zhang, Shuaijun); Yang, Y (Yang, Yan); Liu, WM (Liu, Weiming); Ge, X (Ge, Xun); Zhang, R (Zhang, Rui); Qiu, MX (Qiu, Mengxia); Sang, YX (Sang, Yuxiang); Wang, XJ (Wang, Xingjun); Zhou, XH (Zhou, Xiaohao); Li, TX (Li, Tianxin); Liu, CF (Liu, Congfeng); Dai, N (Dai, Ning); Chen, X (Chen, Xin); Fan, ZY (Fan, Zhiyong); Shen, GZ (Shen, Guozhen)

Source: ACS NANO DOI: 10.1021/acsnano.1c07803 Early Access Date: DEC 2021

Abstract: Homojunctions and homosuperlattices are essential structures and have been widely explored for use in advanced electronic and optoelectronic devices. However, artificially manipulating crystalline phases in two-dimensional (2D) monolayers is still challenging, especially when attempting to engineer lateral homogeneous junctions in a single monolayer of transition metal dichalcogenides (TMDs). Herein, we demonstrate a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS2 monolayer plane. In MLHSs, the 2H domains, which are laterally localized and isolated by potential wells, manifest junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The studies on MLHSs here can provide further understanding of lateral homojunctions and homosuperlattices in a monolayer plane, providing an alternative route to modulate optical and electronic behaviors in TMD monolayers.

Accession Number: WOS:000734283500001

PubMed ID: 34919386

ISSN: 1936-0851

eISSN: 1936-086X

Full Text: https://pubs.acs.org/doi/10.1021/acsnano.1c07803