Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake
Author(s): Li, C (Li, Chun); Zhao, LY (Zhao, Liyun); Shang, QY (Shang, Qiuyu); Wang, RN (Wang, Ruonan); Bai, P (Bai, Peng); Zhang, J (Zhang, Jun); Gao, YA (Gao, Yunan); Cao, Q (Cao, Qiang); Wei, ZM (Wei, Zhongming); Zhang, Q (Zhang, Qing)
Source: ACS NANO DOI: 10.1021/acsnano.1c09844 Early Access Date: DEC 2021
Abstract: The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated gamma-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of similar to 1030 nm. The lasing action occurs at the sub-Mott density level and is generated by exciton-exciton scattering with a high net modal optical gain of similar to 1029 cm(-1). Moreover, the lasing is sustained for microdisks fabricated by a simple laser printing with a reduced threshold. These results suggest that InSe is a promising material for near-infrared microlasers and can be employed in a wide range of applications, including imaging, sensing, and optical interconnects.
Accession Number: WOS:000734450600001
PubMed ID: 34928140
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
wei, zhong ming 0000-0002-6237-0993
Zhang, Jun 0000-0002-9831-6796
Zhang, Qing N-6703-2014 0000-0002-6869-0381
ISSN: 1936-0851
eISSN: 1936-086X
