Author(s): Zhang, XF (Zhang, Xingfei); Zhang, YY (Zhang, Yiyun); Pan, D (Pan, Dong); Yi, XY (Yi, Xiaoyan); Zhao, JH (Zhao, Jianhua); Li, JM (Li, Jinmin)

Source: FRONTIERS IN PHYSICS Volume: 9 Article Number: 725680 DOI: 10.3389/fphy.2021.725680 Published: OCT 21 2021

Abstract: One-dimensional, direct, and narrow band gap indium arsenide (InAs) nanowires (NWs) have been emerging with great potentials for the next-generation wide-spectrum photodetectors. In this study, metal-semiconductor-metal (MSM) structure InAs NW-based photodetectors were fabricated by transferring MBE-grown NWs onto a sapphire substrate via a mechanical stamping method. These NW detectors exhibit strong negative photoconductive (NPC) effects, which are likely caused by the carrier dynamics in the "core-shell" structure of the NWs. Specifically, under the irradiation of a 405 nm violet laser, the maximum I-dark/I-light ratio reaches similar to 10(2) and the NPC gain reaches 10(5) at a low bias voltage of 0.2 V. At room temperature, the rise and decay times of InAs NW devices are 0.005 and 2.645 s, respectively. These InAs NW devices with a high I-dark/I-light ratio and NPC gain can be potentially used in the field of vis/near-IR light communication in the future.

Accession Number: WOS:000726198600001

ISSN: 2296-424X

Full Text: https://www.frontiersin.org/articles/10.3389/fphy.2021.725680/full