Author(s): Wang, XW (Wang, Xiao-Wei); Liang, F (Liang, Feng); Zhao, DG (Zhao, De-Gang); Chen, P (Chen, Ping); Liu, ZS (Liu, Zong-Shun); Yang, J (Yang, Jing)

Source: APPLIED SURFACE SCIENCE Volume: 570 Article Number: 151132 DOI: 10.1016/j.apsusc.2021.151132 Published: DEC 30 2021

Abstract: We investigated the influence of surface morphology, V-defects and residual impurities of InGaN lower waveguide layer on the performance of GaN-based laser diodes. It is found that the surface roughness is one of key factors to affect the L-I and I-V characteristics of lasers. A smooth interface/surface is critical to reduce the threshold current and resistance of the laser. Reducing the V-defects and impurities in InGaN waveguide layer is also expected to raise current injection efficiency and reduce series resistance of lasers.

Accession Number: WOS:000728487400005

ISSN: 0169-4332

eISSN: 1873-5584

Full Text: https://www.sciencedirect.com/science/article/pii/S0169433221021887?via%3Dihub