Author(s): Wang, Jin-Jin; Zhao, Yi-Feng; Zheng, Jun-Ding; Wang, Xiao-Ting; Deng, Xing; Guan, Zhao; Ma, Ru-Ru; Zhong, Ni; Yue, Fang-Yu; Wei, Zhong-Ming; Xiang, Ping-Hua; Duan, Chun-Gang

Source:PHYSICAL CHEMISTRY CHEMICAL PHYSICS DOI:10.1039/d1cp03721h

Abstract: Among the IV-VI compounds, GeSe has wide applications in nanoelectronics due to its unique photoelectric properties and adjustable band gap. Even though modulation of its physical characteristics, including the band gap, by an external field will be useful for designing novel devices, experimental work is still rare. Here, we report a detailed anisotropic Raman response of GeSe flakes under uniaxial tension strain. Based on theoretical analysis, the anisotropy of the phonon response is attributed to a change in anisotropic bond length and bond angle under in-plane uniaxial strain. An enhancement in anisotropy and band gap is found due to strain along the ZZ or AC directions. This study shows that strain-engineering is an effective method for controlling the GeSe lattice, and paves the way for modulating the anisotropic electric and optical properties of GeSe.

Accession Number:WOS:000723279900001

ISSN: 1463-9076

eISSN: 1463-9084

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/CP/D1CP03721H