Author(s): Wang, XL (Wang, Xiaolei); Zhang, C (Zhang, Chen); Yang, QQ (Yang, Qianqian); Liu, L (Liu, Lei); Pan, D (Pan, Dong); Chen, X (Chen, Xue); Deng, JX (Deng, Jinxiang); Zhai, TR (Zhai, Tianrui); Deng, HX (Deng, Hui-Xiong)

Source: APL MATERIALS Volume: 9 Issue: 11 Article Number: 111107 DOI: 10.1063/5.0071093 Published: NOV 1 2021

Abstract: The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in material science. Here, we reported the controlled film growth of Heusler alloy Mn3Ge, which could crystallize in respective tetragonal and hexagonal structures. The tetragonal D0(22)-type Mn3Ge film exhibits strong perpendicular ferromagnetic anisotropy, while the hexagonal D0(19)-type Mn3Ge film indicates non-collinear triangular antiferromagnetic order. From our experimental observations of structure characterizations, magnetic properties, anomalous Hall effect, and magnetoresistance measurements, we realized the manipulation of spin orientations and topological features. Majority/minority spin polarized Fermi surface and density of states of both tetragonal and hexagonal Mn3Ge structures were investigated by density functional theory calculations. Our work not only opens up technology routes toward the development of Mn3X-based devices for applications in topological spintronics and spin-torque memories but also leads to engineer the physical properties for fundamental study.& nbsp;(C)2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).

Accession Number: WOS:000721338600004

ISSN: 2166-532X

Full Text: https://aip.scitation.org/doi/10.1063/5.0071093