Author(s): Gu, YX (Gu, Yuxiang); Shi, L (Shi, Lin); Luo, JW (Luo, Jun-Wei); Li, SS (Li, Shu-Shen); Wang, LW (Wang, Lin-Wang)

Source: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Article Number: 2100458 DOI: 10.1002/pssr.202100458 Early Access Date: NOV 2021

Abstract: SiC is an important wide-bandgap semiconductor for high-power electronics and high-temperature applications. Its Z (1/2) center, recognized as a carrier lifetime killer, has been extensively studied as it is a key issue impeding many applications of SiC. It is well established that the Z (1/2) center originates from carbon vacancies (V-C), but direct access to the microscopic mechanism underlying its nonradiative recombination process is lacking. Herein, to consolidate such identification, the multiphonon-assisted nonradiative recombination rates of previously proposed different candidates of the Z (1/2) center are evaluated by performing first-principles calculations. The calculated electron transition cross sections of the V-C ( sigma n = 2.5 x 10 - 15 cm 2 at the k-site and sigma n = 3.4 x 10 - 15 cm 2 at the h-site) are in accordance with the experimental values [from sigma n = 3.0 x 10 - 15 cm 2 to sigma n = 1.0 x 10 - 14 cm 2 ] for the Z (1/2) center. However, all of the other candidates are orders of magnitudes smaller in transition cross sections. This provides further evidence that the carbon vacancy (V-C) is the Z (1/2) center from the electron transition cross sections. However, it is also found that the hole transition cross sections of the V-C are very small. Various hypotheses are provided to consolidate this fact with the conclusion that Z (1/2) is the carrier lifetime killer.

Accession Number: WOS:000718201600001

ISSN: 1862-6254

eISSN: 1862-6270

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/pssr.202100458