Author(s): Chang, HL (Chang, Hongliang); Shan, JY (Shan, Jingyuan); Liang, DD (Liang, Dongdong); Gao, YQ (Gao, Yaqi); Wang, LL (Wang, Lulu); Wang, JX (Wang, Junxi); Sun, JY (Sun, Jingyu); Wei, TB (Wei, Tongbo)

Source: JOURNAL OF APPLIED PHYSICS Volume: 130 Issue: 19 Article Number: 193103 DOI: 10.1063/5.0065328 Published: NOV 21 2021

Abstract: We report on quasi-van der Waals epitaxy of high-quality AlN film guided by transfer-free graphene (Gr) with low wrinkle density (LWD-Gr) on sapphire. The surface wrinkle density of LWD-Gr is greatly reduced by 94% compared to conventional Gr with high wrinkle density (HWD-Gr). Also noteworthy is that AlN nucleation islands grown on LWD-Gr exhibit better crystalline orientation consistency and more feasibility to coalesce with each other, thus forming AlN film with lower stress and dislocation density. Finally, 285 nm deep ultraviolet (DUV) light-emitting diodes are fabricated on the high-quality AlN template with LWD-Gr, which shows stronger electroluminescence intensity than its counterpart without and with HWD-Gr. The insights granted by this research pave a new pathway for improving the performance of nitride-based DUV optoelectronic devices through Gr engineering.

Accession Number: WOS:000720214400004

ISSN: 0021-8979

eISSN: 1089-7550

Full Text: https://aip.scitation.org/doi/10.1063/5.0065328