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Mode degeneracy and enhanced sensitivity in electrically injected PT-symmetric semiconductor laser with a quasi-high-order exceptional point

2021-12-03

 

Author(s): Chen, JX (Chen, Jingxuan); Wang, YF (Wang, Yufei); Fu, T (Fu, Ting); Wang, XY (Wang, Xueyou); Dai, YQ (Dai, Yingqiu); Zheng, WH (Zheng, Wanhua)

Source: APPLIED PHYSICS EXPRESS Volume: 14 Issue: 12 Article Number: 122005 DOI: 10.35848/1882-0786/ac3804 Published: DEC 1 2021

Abstract: Exceptional points (EPs) can be exploited for a new generation of sensors. We propose an electrically injected parity-time (PT)-symmetric three-ridge semiconductor laser. By introducing the non-zero next-nearest-neighboring coupling coefficient to the Hamiltonian obtained by coupled mode theory, the results of eigenspectra match well with those of numerical simulation obtained by finite element method. Based on the introduced coupling coefficient, we develop our design and obtain a quasi-third-order EP. We analyze the eigenmode splitting vs perturbation strength at the EP, which proves that our design is rather sensitive to the external perturbation and possesses the potential to be applied as active high-sensitive sensors.

Accession Number: WOS:000722010700001

ISSN: 1882-0778

eISSN: 1882-0786

Full Text: https://iopscience.iop.org/article/10.35848/1882-0786/ac3804



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