Author(s): You, ZY (You, Zhongyuan); Wang, ST (Wang, Shuting); Li, ZZ (Li, Zezhong); Zou, YX (Zou, Yuxiao); Lu, TY (Lu, Tianyu); Wang, F (Wang, Fang); Hu, BX (Hu, Bingxi); Wang, X (Wang, Xin); Li, L (Li, Lian); Fang, WH (Fang, Weihai); Liu, Y (Liu, Ying)

Source: NANO ENERGY Volume: 91 Article Number: 106667 DOI: 10.1016/j.nanoen.2021.106667 Published: JAN 2022

Abstract: The high demand on direct current (DC) power source generated through triboelectric effect drives the research on semiconductor-based triboelectric nanogenerators (TENGs), which have lower internal resistance. With high flexibility, organic semiconductor-based DC TENGs are more intriguing. In this work, we use organic semiconductor Poly (3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) as a friction layer to make organic semiconductor-based TENGs. By experimentally analyzing the work functions of PEDOT: PSS, Al alloy, Si, ITO, Cu, and graphene, the DC devices with PEDOT: PSS/Al alloy triboelectric layers exhibit impressive performance. Our PEDOT: PSS/Al alloy DC TENGs achieves open-circuit voltage about 1 V, and short-circuit current up to 309 mu A. The internal resistance of the DC TENG is tested to be about 2x10(4) Omega, and the power density reaches 11.67 mW/m(2). Effects of the load pressure, sliding speed, and size of the devices are systematically studied in this work. The charging probability of our DC TENGs as power sources and human body motion detecting capability as force sensors are all experimentally tested, indicating further potential applications of our PEDOT: PSS/Al alloy DC TENGs as flexible energy sources and motion detector.

Accession Number: WOS:000720258500004

ISSN: 2211-2855

eISSN: 2211-3282

Full Text: https://www.sciencedirect.com/science/article/pii/S2211285521009186?via%3Dihub