Author(s): Ben, YH (Ben, Yuhao); Liang, F (Liang, Feng); Zhao, DG (Zhao, Degang); Yang, J (Yang, Jing); Liu, ZS (Liu, Zongshun); Chen, P (Chen, Ping)

Source: NANOSCALE RESEARCH LETTERS Volume: 16 Issue: 1 Article Number: 161 DOI: 10.1186/s11671-021-03618-8 Published: NOV 2 2021

Abstract: In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 degrees C). Instead of conventional temperature ramp-up process, H-2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H-2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.

Accession Number: WOS:000714016900001

PubMed ID: 34727236

ISSN: 1931-7573

eISSN: 1556-276X

Full Text: https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-021-03618-8