Author(s): Yan, SL (Yan, Shaolong); Huang, JL (Huang, Jianliang); Zhang, YH (Zhang, Yanhua); Ma, WQ (Ma, Wenquan)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 42 Issue: 11 Pages: 1634-1637 DOI: 10.1109/LED.2021.3116129 Published: NOV 2021

Abstract: We report on a mid wavelength avalanche photodiode (APD) device with a separate absorption and multiplication structure. Type II InAs/GaSb superlattices are used as the absorber and lattice-matched high bandgap AlAsSb material is used as the multiplication layer. A reference p-i-n device that has the same absorption layer as that of the APD is also fabricated for comparison. Significant gain is observed for the APD. The 50% cutoff wavelength of the APD is 3.15 mu m at 77 K. Compared to the p-i-n device, at 77 K, the APD's the multiplication gain reaches 32.1 and the corresponding responsivity is 7.07 A/W for the peak wavelength of 2.51 mu m when the reverse bias voltage is 29.4 V. When temperature is changed to 100, 150 and 200 K, the gain becomes 28.1, 15.9 and 6.1, respectively.

Accession Number: WOS:000711636000022

ISSN: 0741-3106

eISSN: 1558-0563

Full Text: https://ieeexplore.ieee.org/document/9551949