Author(s): Xu, PF (Xu, Pengfei); Si, CW (Si, Chaowei); He, YR (He, Yurong); Wei, ZY (Wei, Zhenyu); Jia, L (Jia, Lu); Han, GW (Han, Guowei); Ning, J (Ning, Jin); Yang, FH (Yang, Fuhua)

Source: SENSORS Volume: 21 Issue: 19 Article Number: 6428 DOI: 10.3390/s21196428 Published: OCT 2021

Abstract: Tuning fork gyroscopes (TFGs) are promising for potential high-precision applications. This work proposes and experimentally demonstrates a novel high-Q dual-mass tuning fork microelectromechanical system (MEMS) gyroscope utilizing three-dimensional (3D) packaging techniques. Except for two symmetrically decoupled proof masses (PM) with synchronization structures, a symmetrically decoupled lever structure is designed to force the antiparallel, antiphase drive mode motion and eliminate low frequency spurious modes. Thermoelastic damping (TED) and anchor loss are greatly reduced by the linearly coupled, momentum- and torque-balanced antiphase sense mode. Moreover, a novel 3D packaging technique is used to realize high Q-factors. A composite substrate encapsulation cap, fabricated by through-silicon-via (TSV) and glass-in-silicon (GIS) reflow processes, is anodically bonded to the wafer-scale sensing structures. A self-developed control circuit is adopted to realize loop control and characterize gyroscope performances. It is shown that a high-reliability electrical connection, together with a high air impermeability package, can be fulfilled with this 3D packaging technique. Furthermore, the Q-factors of the drive and sense modes reach up to 51,947 and 49,249, respectively. This TFG realizes a wide measurement range of & PLUSMN;1800 & DEG;/s and a high resolution of 0.1 & DEG;/s with a scale factor nonlinearity of 720 ppm after automatic mode matching. In addition, long-term zero-rate output (ZRO) drift can be effectively suppressed by temperature compensation, inducing a small angle random walk (ARW) of 0.923 & DEG;/& RADIC;h and a low bias instability (BI) of 9.270 & DEG;/h.

Accession Number: WOS:000707361000001

PubMed ID: 34640747

eISSN: 1424-8220

Full Text: https://www.mdpi.com/1424-8220/21/19/6428