Author(s): Jia, YF (Jia, Yufei); Wang, YF (Wang, Yufei); Zhou, XY (Zhou, Xuyan); Xu, LH (Xu, Linhai); Ma, PJ (Ma, Pijie); Chen, JX (Chen, Jingxuan); Qu, HW (Qu, Hongwei); Zheng, WH (Zheng, Wanhua)

Source: CHINESE OPTICS LETTERS Volume: 19 Issue: 10 Article Number: 101401 DOI: 10.3788/COL202119.101401 Published: OCT 10 2021

Abstract: We design a 645 nm laser diode (LD) with a narrow vertical beam divergence angle based on the mode expansion layer. The vertical beam divergence of 10.94 degrees at full width at half-maximum is realized under 1.5 A continuous-wave operation, which is the smallest vertical beam divergence for such an LD based on the mode expansion layer, to the best of our knowledge. The threshold current and output power are 1.07 A and 0.94 W, limited by the thermal rollover for the 100 mu m wide and 1500 mu m long broad area laser, and the slope efficiency is 0.71 W/A. The low coherence device is fabricated with the speckle contrast of 3.6% and good directional emission. Such 645 nm LDs have promising applications in laser display.

Accession Number: WOS:000707317400006

ISSN: 1671-7694

Full Text: https://www.researching.cn/articles/OJcb5dae62deeceab8/html