A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

2021-10-28

 

Author(s): Zhu, WK (Zhu, Wenkai); Lin, HL (Lin, Hailong); Yan, FG (Yan, Faguang); Hu, C (Hu, Ce); Wang, ZA (Wang, Ziao); Zhao, LX (Zhao, Lixia); Deng, YC (Deng, Yongcheng); Kudrynskyi, ZR (Kudrynskyi, Zakhar R.); Zhou, T (Zhou, Tong); Kovalyuk, ZD (Kovalyuk, Zakhar D.); Zheng, YH (Zheng, Yuanhui); Patane, A (Patane, Amalia); Zutic, I (Zutic, Igor); Li, SS (Li, Shushen); Zheng, HZ (Zheng, Houzhi); Wang, KY (Wang, Kaiyou)

Source: ADVANCED MATERIALS Article Number: 2104658 DOI: 10.1002/adma.202104658 Early Access Date: OCT 2021

Abstract: 2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe3GeTe2 as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole-free tunnel barrier at the Fe3GeTe2/InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 mu A at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all-2D van der Waals ferromagnet/semiconductor heterojunction devices.

Accession Number: WOS:000706595200001

PubMed ID: 34642998

ISSN: 0935-9648

eISSN: 1521-4095

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/adma.202104658



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明