Author(s): Wu, JM (Wu, Jingmin); He, Z (He, Zhi); Guo, ZY (Guo, Zhiyu); Tian, R (Tian, Run); Wang, FX (Wang, Fengxuan); Liu, M (Liu, Min); Yang, X (Yang, Xiang); Fan, ZC (Fan, Zhongchao); Yang, FH (Yang, Fuhua)

Source: JOURNAL OF ELECTRONIC MATERIALS DOI: 10.1007/s11664-021-09263-2 Early Access Date: OCT 2021

Abstract: Pulsed laser annealing (PLA, 527 nm, 200-ns pulse, Nd:YLF laser) was used to activate phosphorous-implanted C-face SiC and repair lattice damage. The electrical and structural characteristics of the implanted material surface were analyzed before and after PLA. Electrical activation was confirmed by the circular transfer length method. The implanted layer was characterized by x-ray diffraction. The change in strain can be attributed to the recovery of lattice damage induced by laser annealing. Transmission electron microscopy (TEM) showed that amorphous 4H-SiC structure was transformed to crystalline structure by PLA. The defect evolution was investigated using TEM images and diffraction patterns.

Accession Number: WOS:000708360700003

ISSN: 0361-5235

eISSN: 1543-186X

Full Text: https://link.springer.com/article/10.1007%2Fs11664-021-09263-2