Author(s): Hu, TG (Hu, Tiangui); Li, XD (Li, Xiaodong); Liu, C (Liu, Chang); Lin, S (Lin, Shan); Wang, KY (Wang, Kaiyou); Liu, J (Liu, Jian); Zhao, LX (Zhao, Lixia)

Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 55 Issue: 3 Article Number: 035102 DOI: 10.1088/1361-6463/ac2cad Published: JAN 20 2022

Abstract: Here, we report on a new type of conical nanostructured GaN (CNG), and the corresponding high performance GaN-based metal-semiconductor-metal (MSM) photodetectors (PDs). Compared with the control planar GaN-based MSM PDs, the photocurrent increases by similar to 600 times at 0.4 V. The responsivity of the CNG-based PDs can reach similar to 2 x 10(4) A W-1 at 4 V, increased by similar to 2000 times compared to the planar GaN-based PDs. The specific detectivity of the CNG-based PDs reaches the maximum at 1 V, similar to 10(14) Jones, which is more than 800 times to that of the planar GaN-based PDs. Our work paves the way to develop high-performance GaN-based PDs using a new nanostructure for detecting weak optical signals.

Accession Number: WOS:000708206000001

ISSN: 0022-3727

eISSN: 1361-6463

Full Text: https://iopscience.iop.org/article/10.1088/1361-6463/ac2cad