A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Intrinsic phonon anharmonicity in heavily doped graphene probed by Raman spectroscopy

2021-10-14

 

Author(s): Chen, X.; Lin, M-L; Cong, X.; Leng, Y-C; Zhang, X.; Tan, P-H

Source:CARBON Volume:185 Page:282-288 DOI:10.1016/j.carbon.2021.09.017 Published:NOV 15 2021

Abstract: The temperature-dependent (T-dependent) linewidth (Gamma(G)) and frequency shift (Delta omega(G)) of the G mode provide valuable information on the phonon anharmonicity of graphene-based materials. In contrast to the negligible contribution from electron-phonon coupling (EPC) to the linewidth of a Raman mode in semiconductors, Gamma(G) in pristine graphene is dominated by EPC contribution at room temperature due to its semimetallic characteristics. This leads to difficulty in resolving intrinsic contribution from phonon anharmonicity to Gamma(G). Here, we probed the intrinsic phonon anharmonicity of heavily-doped graphene by T-dependent Raman spectra based on FeCl3-based stage-1 graphite intercalation compound (GIC), in which the EPC contribution is negligible due to the large Fermi level (E-F) shift. The Delta omega(G) and Gamma(G) exhibit a nonlinear decrease and noticeable broadening with increasing temperature, respectively, which are both dominated by phonon anharmonicity processes. The contribution of phonon anharmonicity to Gamma(G) of heavily-doped graphene decreases as the E-F approaches to the Dirac point. However, the T dependence of Delta omega(G) is almost independent on E-F and qualitatively agrees with the theoretical result of pristine graphene. These results provide a deeper understanding of the role of phonon anharmonicity on the Raman spectra of heavily doped graphene. (C) 2021 Elsevier Ltd. All rights reserved.

Accession Number:WOS:000701946100013

ISSN: 0008-6223

eISSN: 1873-3891

Full Text: https://www.sciencedirect.com/science/article/pii/S0008622321009088?via%3Dihub



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明